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ZXMN3F30FH
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source breakdown
V (BR)DSS
30
V
I D = 250 μ A, V GS =0V
Voltage
Zero gate voltage drain
I DSS
0.5
μ A
V DS = 30V, V GS =0V
current
Gate-body leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-Source threshold
V GS(th)
1.0
3.0
V
I D = 250 μ A, V DS =V GS
voltage
Static Drain-Source
on-state resistance (*)
Forward
R DS(on)
g fs
5.2
0.047
0.065
Ω
Ω
S
V GS = 10V, I D = 3.2A
V GS = 4.5V, I D = 2.8A
V DS = 15V, I D = 2.5A
transconductance (*)(?)
Dynamic (?)
Input capacitance
C iss
318
pF
Output capacitance
Reverse transfer
C oss
C rss
75
45
pF
pF
V DS = 15V, V GS =0V
f=1MHz
capacitance
Switching (?) (?)
Turn-on-delay time
t d(on)
1.6
ns
Rise time
Turn-off delay time
Fall time
Total gatecharge
Gate-Source charge
Gate-Drain charge
t r
t d(off)
t f
Q g
Q gs
Q gd
2.6
17
9.3
7.7
1
1.8
ns
ns
ns
nC
nC
nC
V DD = 15V, V GS = 10V
I D = 1A
R G ≈ 6.0 Ω
V DS = 15V, V GS = 10V
I D = 2.5A
Source-drain diode
Diode forward voltage (*)
Reverse recovery time (?)
V SD
t rr
0.73
12
1.2
V
ns
I S = 1.25A, V GS =0V
T j =25 o C, I F =1.6A
Reverse recovery charge (?) Q rr
4.8
nC
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%.
(?) For design aid only, not subject to production testing.
(?) Switching characteristics are independent of operating junction temperature.
Issue 2 - February 2008
? Zetex Semiconductors plc 2008
4
www.zetex.com
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